Hysteresis-free reactive high power impulse magnetron sputtering
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چکیده
منابع مشابه
Hysteresis-free reactive high power impulse magnetron sputtering
High power impulse magnetron sputtering (HIPIMS) of an Al target in Ar/O2 mixtures has been studied. The use of HIPIMS is shown to drastically influence the process characteristics compared to conventional sputtering. Under suitable conditions, oxide formation on the target as the reactive gas flow is increased is suppressed, and the hysteresis effect commonly observed as the gas flow is varied...
متن کاملHigh power impulse magnetron sputtering discharge
J. T. Gudmundsson, N. Brenning, Daniel Lundin and Ulf Helmersson, High power impulse magnetron sputtering discharge, 2012, Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, (30), 030801. http://dx.doi.org/10.1116/1.3691832 Copyright: American Vacuum Society, This article may be downloaded for personal use only. Any other use requires prior permission of the author and the ...
متن کاملOff-normal Film Growth by High Power Impulse Magnetron Sputtering
In this study we contribute towards establishing the process-microstructure relationships in thin films grown off-normally by ionized physical vapor deposition. High power impulse magnetron sputtering (HiPIMS) is used at various peak target powers and deposition rates to grow copper (Cu) and chromium (Cr) films from a cathode placed at an angle 90 degrees with respect to the substrate normal. F...
متن کاملCross-field ion transport during high power impulse magnetron sputtering
In this study, the effect on thin film growth due to an anomalous electron transport, found in high power impulse magnetron sputtering (HiPIMS) has been investigated for the case of a planar circular magnetron. An important consequence of this type of transport is that it affects the way ions are being transported in the plasma. It was found that a significant fraction of ions are transported r...
متن کاملUnderstanding deposition rate loss in high power impulse magnetron sputtering
The lower deposition rate for high power impulse magnetron sputtering (HiPIMS) compared to direct current magnetron sputtering for the same average power is often reported as a drawback. The often invoked reason is back-attraction of ionized sputtered material to the target, due to a substantial negative potential profile from the location of ionization towards the cathode. Emitting and swept L...
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ژورنال
عنوان ژورنال: Thin Solid Films
سال: 2008
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2007.08.123